주제 : Instability of a-IGZO TFT under PBS and PBIS

1. IGZO TFT의 기본 특성 파악

2. 소자의 transfer, output 측정 그래프를 통한 특성 파악

3. PBS 측정시 negative direction shift → oxygen vacancy

   PBS recovery to initial state→ electron detrapping

   

4. PBIS 측정시 positive direction shift → bias induced electron trapping

   PBIS recovery over initial state → photon-assisted electron trapping

   

final report (ppt & word)

2022_Capstone_Final_반도체및광응용_Team16_Instability of a-IGZO TFT under positive bias stress with illumination (1) (2).docx

2022_Capstone_Final_반도체및광응용_Team16_Instability of a-IGZO TFT under positive bias stress with illumination.pptx

발표영상

2022_Capstone_Final_반도체및광응용_Team16_Instability of a-IGZO TFT under positive bias stress with illumination